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| 2SK3651-01R FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Ratings Unit V 200 V 220 A Continuous drain current 25 A Pulsed drain current 100 V Gate-source voltage 30 A Non-repetitive Avalanche current 25 mJ Maximum Avalanche Energy 372 kV/s Maximum Drain-Source dV/dt 20 kV/s Peak Diode Recovery dV/dt 5 Max. power dissipation 3.10 W 85 Operating and storage Tch +150 C -55 to +150 temperature range Tstg C Isolation voltage VISO *6 2 kVrms *1 L=1mH, Vcc=48V *2 Tch<150C *3 IF< -ID, -di/dt=50A/s, Vcc < BVDSS, Tch < 150C = = = = *4 VDS < 250V *5 VGS=-30V *6 t=60sec f=60Hz = Item Drain-source voltage Symbol VDS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=250V VDS=200V VGS=30V ID=12.5A VGS=0V VGS=0V VDS=0V VGS=10V Tch=25C Tch=125C 10 75 16 2000 400 25 20 30 60 20 44 14 16 1.10 0.45 1.5 Min. 250 3.0 Typ. Max. 5.0 25 250 100 100 3000 600 38 30 45 90 30 66 21 24 1.65 Units V V A nA m S pF ID=12.5A VDS=25V VDS=75V VGS=0V f=1MHz VCC=72V ID=12.5A VGS=10V RGS=10 VCC=72V ID=12A VGS=10V L=100H Tch=25C IF=25A VGS=0V Tch=25C IF=25A VGS=0V -di/dt=100A/s Tch=25C 8 ns nC 25 A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.471 40.0 Units C/W C/W www.fujielectric.co.jp/denshi/scd 1 2SK3651-01R Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 120 500 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=25A 100 400 80 300 60 EAV [mJ] PD [W] 200 40 100 20 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 Tc [C] starting Tch [C] Typical Output Characteristics ID=f(VDS):80s Pulse test,Tch=25C 100 100 Typical Transfer Characteristic ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C 20V 80 10V 8V 7.5V ID [A] 7.0V 40 6.5V ID[A] 60 10 1 20 6.0V VGS=5.5V 0.1 0 1 2 3 4 5 6 7 8 9 10 0 0 2 4 6 8 10 12 VDS [V] VGS[V] Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 100 0.25 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s Pulse test, Tch=25C VGS= 5.5V 6.0V 0.20 6.5V 7.0V 7.5V RDS(on) [ ] 10 0.15 8V 10V 20V gfs [S] 0.10 1 0.05 0.1 0.1 0.00 1 10 100 0 20 40 60 80 100 ID [A] ID [A] 2 2SK3651-01R FUJI POWER MOSFET 270 240 210 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=12.5A,VGS=10V 7.0 6.5 6.0 5.5 5.0 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA RDS(on) [ m ] max. VGS(th) [V] 180 150 max. 120 90 60 30 0 -50 -25 0 25 50 75 100 125 150 typ. 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. Tch [C] Tch [C] Typical Gate Charge Characteristics VGS=f(Qg):ID=25A, Tch=25C 10 14 12 10 Vcc= 36V 72V 96V 8 6 10 4 2 0 0 10 20 30 40 50 60 -2 -1 0 1 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Ciss 10 VGS [V] C [nF] Coss Crss 10 10 -1 10 0 10 1 10 2 Qg [nC] VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s Pulse test,Tch=25C 100 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=72V, VGS=10V, RG=10 tf 10 10 2 td(off) IF [A] t [ns] tr td(on) 1 10 1 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 10 0 10 -1 10 0 10 1 10 2 VSD [V] ID [A] 3 2SK3651-01R Transient Thermal Impedance Zth(ch-c)=f(t):D=0 FUJI POWER MOSFET 10 1 10 0 Zth(ch-c) [**/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C. Vcc=48V 10 2 Avalanche Current I AV [A] Single Pulse 10 1 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 4 |
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